Typical Characteristics
20
V GS = 10V
1.4
4.5V
3.5V
15
10
3.0V
2.5V
1.2
V GS = 3.0V
3.5V
4.0V
5
0
2.0V
1
0.8
4.5V
5.0V
6.0V
10V
0
0.5
1
1.5
2
0
5
10
15
20
25
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I D = 5.5A
0.07
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
I D = 3.75 A
1.4
1.2
V GS = 4.5V
0.06
0.05
T A = 125 o C
0.04
1
0.03
0.8
0.02
T A = 25 o C
0.6
-50
-25
0
25
50
75
100
125
150
0.01
2
2.5
3
3.5
4
4.5
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation
withTemperature.
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
25 C
30
25
V DS = 5V
T A = -55 o C
125 o C
o
100
10
V GS = 0V
T A = 125 o C
20
15
10
5
1
0.1
0.01
0.001
25 o C
-55 o C
0
1
1.5
2
2.5
3
3.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC645N Rev C(W)
相关PDF资料
FDC6506P MOSFET P-CHAN DUAL 30V SSOT6
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC654P MOSFET P-CH 30V 3.6A SSOT-6
FDC655BN MOSFET N-CH 30V 6.3A SSOT-6
FDC6561AN MOSFET N-CHAN DUAL 30V SSOT6
FDC658AP MOSFET P-CH SGL LL 30V 4A SSOT6
FDC658P MOSFET P-CH 30V 4A SSOT-6
FDC855N MOSFET N-CH 30V 6.1A 6-SSOT
相关代理商/技术参数
FDC645N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
FDC645N_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
FDC645N_F095 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC645N-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC645N Series 30 V 26 mOhm N-Channel PowerTrench Mosfet - SSOT-6
FDC6506 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel Logic Level PowerTrench⑩ MOSFET
FDC6506P 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6506P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6506P_Q 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube